The new SY757xx family combines voltage translation, low additive jitter and compact packaging for high-speed FPGA and SoC ...
TI's TMCS2100-Q1 uses multiaxial sensing to reject crosstalk in coreless Hall-effect current sensors for traction inverters.
The new series offers up to 83,000 µF, 300 V ratings and 10,000-hour endurance for demanding compact power applications.
Here’s a RoundUp of this month’s must-read news about silicon carbide (SiC), gallium nitride (GaN), and Wide Bandgap ...
GaN HEMTs with gate-termination extensions show improved single-event hardness, enabling higher operating voltages in LEO satellites. Gallium Nitride HEMTs have many advantages for use in space-based ...
The sensor combines 2µs output refresh, speeds above 50,000 rpm and three-axis magnetic sensing in a compact DFN-6 package.
Rad-hard MOSFETs, GaN transistors and other HiRel devices provide reliable power for the telescope’s demanding space mission.
Navitas CEO Chris Allexandre and Claros CEO Dan Kultran discuss the planned acquisition, Claros's 40 A IVR chip, and the deal ...
The nPZ2100 manages sensors and peripherals autonomously, reducing MCU wake-ups and energy consumption in battery-powered ...
Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on Navitas’ Claros Acquisition, ...
The new devices combine 30 A current capability, 1,500 VDC dielectric withstand voltage and operation up to +150°C.
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