A recent technical paper titled “Factors determining bond wave speed in wafer bonding” was published by researcher at Yokohama National University, Tokyo Electron Kyushu Limited and ANVOS Analytics.
Direct wafer bonding is defined as a bonding procedure involving two clean, highly polished wafers, with no intermediate layer used 1. Once the two polished wafers have undergone cleaning and surface ...
Fab processes are optimizing for cleanliness, planarity, and high bond quality. Nanotwinned copper and SiCN PVD enable lower anneal and deposition temperatures for HBM. A thin, protective layer helps ...
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