A new technical paper, “3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography,” was published by researchers at Cornell University, ASM ...

University of Liverpool researchers have discovered a way to host some of the most significant properties of graphene in a three-dimensional (3D) material, potentially removing the hurdles for these ...

Electron tomography is a powerful imaging technique that enables the three-dimensional (3D) visualization and analysis of nanostructures at the atomic scale. By combining advanced electron microscopy ...

“To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require ...